A Novel Read Scheme for Large Size One-Resistor Resistive Random Access Memory Array

作者：Zackriya Mohammed V; Kittur Harish M; Chin Albert^*

来源：Scientific Reports, 2017, 7(1): 42375.

DOI：10.1038/srep42375

The major issue of RRAM is the uneven sneak path that limits the array size. For the first time record large One-Resistor (1R) RRAM array of 128x128 is realized, and the array cells at the worst case still have good Low-/High-Resistive State (LRS/HRS) current difference of 378 nA/16 nA, even without using the selector device. This array has extremely low read current of 9.7 mu A due to both low-current RRAM device and circuit interaction, where a novel and simple scheme of a reference point by half selected cell and a differential amplifier (DA) were implemented in the circuit design.

• 出版日期2017-2-10