Dependence of Generation-Recombination Noise With Gate Voltage in FD SOI MOSFETs

作者：Luque Rodriguez Abraham; Jimenez Tejada Juan A; Rodriguez Bolivar Salvador; Almeida Luciano Mendes; Aoulaiche Marc; Claeys Cor; Simoen Eddy

来源：IEEE Transactions on Electron Devices, 2012, 59(10): 2780-2786.

DOI：10.1109/TED.2012.2208970

• Fully depleted (FD) transistor
• low-frequency noise (LFN)
• multigate transistors
• noise modeling
• simulation of electronic devices

A model for computing the generation-recombination noise due to traps within the semiconductor film of fully depleted silicon-on-insulator MOSFET transistors is presented. Dependence of the corner frequency of the Lorentzian spectra on the gate voltage is addressed in this paper, which is different to the constant behavior expected for bulk transistors. The shift in the corner frequency makes the characterization process easier. It helps to identify the energy position, capture cross sections, and densities of the traps. This characterization task is carried out considering noise measurements of two different candidate structures for single-transistor dynamic random access memory devices.

• 出版日期2012-10