Highly tunable local gate controlled complementary graphene device performing as inverter and voltage controlled resistor

作者：Kim Wonjae^*; Riikonen Juha; Li Changfeng; Chen Ya; Lipsanen Harri

来源：Nanotechnology, 2013, 24(39): 395202.

DOI：10.1088/0957-4484/24/39/395202

Using single-layer CVD graphene, a complementary field effect transistor (FET) device is fabricated on the top of separated back-gates. The local back-gate control of the transistors, which operate with low bias at room temperature, enables highly tunable device characteristics due to separate control over electrostatic doping of the channels. Local back-gating allows control of the doping level independently of the supply voltage, which enables device operation with very low V-DD. Controllable characteristics also allow the compensation of variation in the unintentional doping typically observed in CVD graphene. Moreover, both p-n and n-p configurations of FETs can be achieved by electrostatic doping using the local back-gate. Therefore, the device operation can also be switched from inverter to voltage controlled resistor, opening new possibilities in using graphene in logic circuitry.

• 出版日期2013-10-4