摘要
Spin-torque switching of magnetic devices offers new technological possibilities for data storage and integrated circuits. We have investigated domain-wall motion in a ferromagnetic thin film driven by a spin-polarized current using an atomistic spin model with a modified Landau-Lifshitz-Gilbert equation including the effect of the spin-transfer torque. The presence of the spin-transfer torque is shown to create an out-of-plane domain wall, in contrast to the external-field-driven case where an in-plane wall is found. We have investigated the effect of the spin torque on domain-wall displacement, domain-wall velocity, and domain-wall width, as well as the equilibration time in the presence of the spin-transfer torque. We have shown that the minimum spin-current density, regarded as the critical value for domain-wall motion, decreases with increasing temperature.
- 出版日期2011-5-18