Ultrasonic treatment-induced modification of the electrical properties of InAs p-n junctions

作者：Sukach A V^*; Teterkin V V

来源：Technical Physics Letters, 2009, 35(6): 514-517.

DOI：10.1134/S1063785009060108

The effect of a high-frequency (f = 5 MHz) ultrasonic treatment (UST) on the low-temperature (T = 77 K) electrical properties of smooth InAs p-n junctions has been studied. It is established that the most UST-sensitive parameter is the tunneling current component, which is probably related to the channels of increased conductivity localized near dislocations. The current component determined by the recombination of carriers in the space charge region free of dislocations is less sensitive. The electrical characteristics of p-n junctions exhibit a tendency to restoration during the long-term storage of treated samples under laboratory conditions. Possible models of the influence of UST on the electrical properties of smooth InAs p-n junctions are discussed.

• 出版日期2009-6