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摘要
Anisotropic magnetoresistance and the planar Hall effect are discovered and studied in a GaAs structure containing a single layer delta-doped with manganese to its total content equivalent to 0.18 monolayer. The Mn-delta-doped structures were obtained by combining the methods of metalorganic chemical vapor deposition (MOCVD) in a hydride system and laser ablation of solid targets in a common technological cycle. The character of the dependence of the Hall resistance on the magnetic field is indicative of the presence of a planar cubic magnetic anisotropy.
- 出版日期2010-6
