Atomic resolution mapping of interfacial intermixing and segregation in InAs/GaSb superlattices: A correlative study

作者：Kim Honggyu; Meng Yifei; Rouviere Jean Luc; Isheim Dieter; Seidman David N; Zuo Jian Min^*

来源：Journal of Applied Physics, 2013, 113(10): 103511.

DOI：10.1063/1.4794193

We combine quantitative analyses of Z-contrast images with composition analyses employing atom probe tomography (APT) correlatively to provide a quantitative measurement of atomic scale interfacial intermixing in an InAs/GaSb superlattice (SL). Contributions from GaSb and InAs in the Z-contrast images are separated using an improved image processing technique. Correlation with high resolution APT composition analyses permits an examination of interfacial segregation of both cations and anions and their incorporation in the short period InAs/GaSb SL. Results revealed short, intermediate, and long-range intermixing of In, Ga, and Sb during molecular beam epitaxial growth and their distribution in the SL.

• 出版日期2013-3-14
• 单位中国地震局; 西北大学