摘要

A thin polycrystalline film bonded to a thick substrate of different thermal expansion coefficients will experience thermal stresses when the temperature is changed. These stresses and the corresponding strain energies for grains having various crystallographic orientations (hkl) relative to the film surface have been calculated for diamond-cubic polycrystalline films diamond, Si and Ge. The results show that, only in (100)- and (111)-oriented grains, the stresses a, and 92 in the plane of the film surface are equal and (100)-oriented grains have the lowest stress and strain energy and (111)-oriented grains the highest. So that, from stress and/or strain energy minimization, the (100) preferred orientation should be favorable in these films after annealing. The stresses sigma(1) and sigma(2) and strain energy densities w in other (hkl)-oriented grains increase linearly with increasing angle between (hkl) and (10 0). This can be used to estimate the relative values of the stresses and strain energies from a deviation of a grain orientation from (100).