Stabilization of multiple resistance levels by current-sweep in SiOx-based resistive switching memory

作者：Zhou Fei; Chang Yao Feng^*; Fowler Burt; Byun Kwangsub; Lee Jack C

来源：Applied Physics Letters, 2015, 106(6): 063508.

DOI：10.1063/1.4909533

Using current-sweep measurements, the set process in SiOx-based resistive random access memory (RRAM) has been found to consist of multiple resistance-reduction steps. Variation in set behaviors was observed and attributed to different defect distributions in the resistance switching region. Physical mechanism of electroforming process is discussed, which further explains the observed variation of defect distributions. A compliance current study confirms that the achievable memory states of SiOx RRAM are determined by its set behavior. This finding provides additional insight on achieving multi-bit memory storage with SiOx RRAM.

• 出版日期2015-2-9