摘要

Annealing studies were performed to investigate the effects of heat treatment on InN thin films by changing the annealing condition from vacuum to high pressure N-2. A significant variation of similar to 400 meV in the surface work function was observed for InN films. The basic principles of Kelvin probe measurement revealed that the surface band bending E-SBB is crucial in investigating the significant changes of surface work function on the InN. The stoichiometric ratio imbalance of In and N was indirectly determined to be the main cause of the variation in band bending by analyzing the X-ray diffraction and energy dispersive X-ray measurements. Thus, the annealing treatment could be an effective method to adjust the surface work function of InN by changing the annealing condition from vacuum to high pressure N-2.

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