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摘要
The main reasons why I-V curves are abnormal in developing GaAs/Ge solar cells are discussed for each diffusion in GaAs/Ge interface, which will form additional junction or potential. And theoretical calculating simulations agreeing with experiments re-confirm above ideas. As a result, GaAs/Ge solar cells with 20.95% (AM0, 25°C, 2 cm ×4 cm) are successfully obtained by increasing growth temperature and optimizing condition of forming nucleus.
- 出版日期2005
- 单位云南师范大学
