A nano-scale-sized 3D element for phase change memories

作者：Lv, Hangbing^*; Lin, Yinyin; Zhou, Peng; Tang, Tingao; Qiao, Baowei; Lai, Yunfeng; Feng, Jie; Chen, Bomy

来源：Semiconductor Science and Technology, 2006, 21(8): 1013-1017.

DOI：10.1088/0268-1242/21/8/004

• Phase change materials
• Phase change memories

A nano-scale-sized 3D phase change memory element has been successfully fabricated using novel metal sidewall pattern technology, based entirely on a CMOS process which is independent of lithographic size limitations. With Ge2Sb2Te5 (GST) as the phase change material, a 280 nm x 35 nm contact area cell (equal to 100 nm contact diameter) has been successfully fabricated by 5 mu m university lithographic techniques. The effects of annealing temperature on the GST resistivity and crystal structure have been studied. Static mode switching (dc tests) and pulse mode tests were performed, and an on/off ratio greater than 100 has been achieved.

• 出版日期2006-8
• 单位复旦大学; 上海交通大学