A statistical RCL interconnect delay model taking account of process variations

作者：Zhu Zhang-Ming^*; Wan Da-Jing; Yang Yin-Tang; En Yun-Fei

来源：Chinese Physics B, 2011, 20(1): 018401.

DOI：10.1088/1674-1056/20/1/018401

• process variation
• interconnect line
• statistical delay
• successive linear approximation

As the feature size of the CMOS integrated circuit continues to shrink, process variations have become a key factor affecting the interconnect performance. Based on the equivalent Elmore model and the use of the polynomial chaos theory and the Galerkin method, we propose a linear statistical RCL interconnect delay model, taking into account process variations by successive application of the linear approximation method. Based on a variety of nano-CMOS process parameters, HSPICE simulation results show that the maximum error of the proposed model is less than 3.5%. The proposed model is simple, of high precision, and can be used in the analysis and design of nanometer integrated circuit interconnect systems.

• 出版日期2011-1
• 单位西安电子科技大学