Detector with High Internal Photocurrent Gain Based on ZnO:N

作者：Kosyachenko L A; Lashkarev G V; Ievtushenko A I^*; Lazorenko V I; Sklyarchuk V M; Sklyarchuk O F

来源：Acta Physica Polonica, A, 2011, 119(5): 681-682.

The photoresponsive structures prepared by magnetron sputtering of ZnO:N on p-Si substrates followed by vacuum evaporation of semi-transparent Ni film on ZnO surface were investigated. The mentioned structures show high sensitivity that sharply enhances with increase of applied voltage. Under a bias 5 V, the responsivities at lambda = 390 and 850 nm are equal to 210 A/W and 110 A/W which correspond to the quantum efficiencies of 655 and 165, respectively. It is suggested that the observed high response is attributed to internal gain in phototransistor structure containing Ni/n-ZnO Schottky contact as emitter junction and n-ZnO/p-Si heterostructure as collector junction.

• 出版日期2011-5