Nanostructured Barrier Type Anodic Oxide Metal-Insulator-Metal Capacitors

作者：Kannadassan D; Karthik R; Bhagini Maryam Shojaei; Mallick P S^*

来源：Journal of Nanoelectronics and Optoelectronics, 2012, 7(4): 400-404.

DOI：10.1166/jno.2012.1317

• MIM Capacitor
• Anodization
• High-k
• Frequency Dependant Capacitance
• Dielectric Polarization

In this paper, we have presented a detailed study of electrical properties and fabrication of Metal-Insulator-Metal capacitor using anodization. Anodization is regarded as a potential fabrication process for the preparation of high quality metal-insulator-metal capacitors to meet the requirements of International Technology Roadmap for Semiconductors 2012 predicted for Mixed Signal/RF technologies. With high capacitance density of 6.01 fF/mu m(2) and low voltage coefficient of capacitance less than 500 ppmN, anodic oxide MIM capacitor shows that the capacitance varies by less than 6% in the frequency range of 1 KHz to 1 MHz at 3 V and low leakage current density of less than 1 nA/cm(2) at 2 V.

• 出版日期2012-8