An X-band four-way combined GaN solid-state power amplifier

作者：Chen Chi Hao Yue Feng Hui Gu Wenping Li Zhiming Hu Shigang Ma Teng

来源：半导体学报, 2010, (01): 58-64.

• A1GaN/GaN HEMT
• solid-state power amplifiers
• Wilkinson hybrid coupler

<正>An X-band four-way combined GaN solid-state power amplifier module is fabricated based on a selfdeveloped AlGaN/GaN HEMT with 2.5-mm gate width technology on SiC substrate.The module consists of an AlGaN /GaN HEMT,Wilkinson power hybrids,a DC-bias circuit and microstrip matching circuits.For the stability of the amplifier module,special RC networks at the input and output,a resistor between the DC power supply and a transistor gate at the input and 3λ/4 Wilkinson power hybrids are used for the cancellation of low frequency self-oscillation and crosstalk of each amplifier.Under Vds=27 V,Vgs=-4.0 V,CW operating conditions at 8 GHz,the amplifier module exhibits a line gain of 5 dB with a power added efficiency of 17.9%,and an output power of 42.93 dBm;the power gain compression is 2 dB.For a four-way combined solid-state amplifier,the power combining efficiency is 67.5%. It is concluded that the reduction in combining efficiency results from the non-identical GaN HMET,the loss of the hybrid coupler and the circuit fabricating errors of each one-way amplifier.

• 出版日期2010-1-15
• 单位西安电子科技大学