Analysis of epitaxial laterally overgrown silicon structures by high resolution x-ray rocking curve imaging

作者：Heimbrodt B; Luebbert D; Koehler R; Boeck T; Gerlitzke A K; Hanke M^*

来源：Crystal Research and Technology, 2009, 44(5): 534-538.

DOI：10.1002/crat.200900115

• epitaxial lateral overgrowth
• ELO
• liquid phase epitaxy

Spatially resolved rocking curve imaging has been used to analyze laterally overgrown silicon layers grown by liquid phase epitaxy. We were able to study both the overgrown layer as well as the strain fluctuations of the Si substrate underneath by means of a tabletop x-ray topographic setup. The strain-field analysis reveals relative changes of the lattice parameter up to 3.5 x 10(-6) in the silicon substrate underneath the overgrown layer in particular regions and a down bending of both wings of the epitaxial overgrown layers.

• 出版日期2009-5