Atomic layer deposition and post-deposition annealing of PbTiO3 thin films

作者：Harjuoja J^*; Kosola A; Putkonen M; Niinisto L

来源：Thin Solid Films, 2006, 496(2): 346-352.

DOI：10.1016/j.tsf.2005.09.026

• lead titanate
• atomic layer deposition

Lead titanate thin films were deposited by atomic layer deposition on Si(100) using Ph4Pb and Ti(O-i-Pr)(4) as metal precursors and O-3 and H2O as oxygen sources. The influence of the Ti:Pb precursor pulsing ratio on the film growth, stoichiometry and quality was studied at two different temperatures, i.e. 250 and 300 degrees C. Uniform and stoichiometric films were obtained using a Ti: Pb precursor pulsing ratio of I : 10 at 250 degrees C or 1 :28 at 300 degrees C. The as-deposited films were amorphous but the crystalline PbTiO3 phase was obtained by rapid thermal annealing at 600-900 degrees C both in N-2 and O-2 ambient. Thin PbTiO3 films were visually uniform and roughness values for as-deposited and annealed films were observed by atomic force microscopy.

• 出版日期2006-2-21