Investigation of the Data Retention Initial State Dependence in 3D NAND Flash Memory [3D NAND闪存数据保持力与初始状态依赖性研究]

作者：Zhang M.-M.; Wang Q.; Jing C.; Huo Z.-L.^*

来源：Acta Electronica Sinica, 2020, 48(2): 314-320.

DOI：10.3969/j.issn.0372-2112.2020.02.014

• 3D NAND
• Bit error rate
• Data retention
• Mechanism model
• Read margin

Data retention is an important reliability characteristic of NAND flash memory. Based on the user mode, this paper studies the data retention characteristics of charge trapping 3D NAND flash memory under different initial conditions. The results show that device programmed can effectively reduce the bit error rate after high-temperature data retention of NAND flash memory. Especially with the increase of the number of erasing and writing, the data retention of charge-trapping 3D NAND flash memory is more obvious under different initial conditions. The result shows that the flash memory is most suitable for storage 0-1V, charge-trapping 3D NAND flash devices should avoid long-term deep erase conditions. In addition, modeled and demonstrated based on the phenomenon the threshold voltage offset after the high-temperature data retention of the flash memory is increased when initial state is erase state. Through the design experiment, the mechanism factor model accords with the experimental result. This study provides a theoretical reference for the long-term storage of charge-trapping 3D NAND flash devices.

• 出版日期2020
• 单位中国科学院大学