摘要

A discrete growth model with quenched impurities driven by an external force is studied on a Sierpinski gasket substrate. At the critical force F (c) , the growth velocity v of the average interface height follows a power-law behavior v(t) similar to t (-delta) , with delta a parts per thousand 0.268(1), and the interface width W shows a scaling behavior W (2)(t,L) similar to L (2 alpha) f(t/L (z) ), with alpha a parts per thousand 1.22(4) and z a parts per thousand 1.68(4). Near F (c) , the steady-st

  • 出版日期2013-12

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