Effective Techniques for Optimized Subthreshold Design Using Symmetric Double Gate MOSFET

作者：Kothari Vishal; Pattanaik Manisha; Dhar Subhra^*; Rajaram P

来源：Journal of Computational and Theoretical Nanoscience, 2012, 9(12): 2160-2165.

DOI：10.1166/jctn.2012.2632

• Subthreshold Slope
• Leakage Current
• Layered Doping
• Threshold Voltage
• Oxide Thickness

Techniques like gate work function engineering, layered channel doping, varying oxide thickness and increasing channel length are employed to attain steepest subthreshold slope for a 90 nnn DG MOSFET to provide higher operating frequency and also achieve controlled leakage current so that power dissipation and performance in subthreshold operation is optimized. The simulation of this device proves that the device with 1.5 nnn oxide thickness is superior and optimised when compared to other technologies in the nanometre regime. Gate work function engineering using molybdenum is used to set the appropriate threshold voltage at same supply voltage to reduce short channel effects and leakage current at the deep submicron region. Layered channel doping of 1 nm provides the optimum drive current, reduced subthreshold voltage and increased operating frequency when the devices are operated in the weak inversion region.

• 出版日期2012-12