Deposition of copper-doped iron sulfide (Cu(X)Fe1-S-X) thin films using aerosol-assisted chemical vapor deposition technique

作者：Disale Sujit D; Garje Shivram S^*

来源：Applied Organometallic Chemistry, 2010, 24(10): 734-740.

DOI：10.1002/aoc.1676

• single-source precursor
• copper-doped iron sulfide
• thin films
• aerosol assisted chemical vapor deposition

Copper-doped iron sulfide (CuxFe1-S-x, x = 0.010-0.180) thin films were deposited using a single-source precursor, Cu(LH)(2)Cl-2 (LH = monoacetylferrocene thiosemicarbazone), by aerosol-assisted chemical vapor deposition technique. The Cu-doped FeS thin films were deposited at different substrate temperatures, i.e. 250, 300, 350, 400 and 450 degrees C. The deposited thin films were characterized by X-ray diffraction (XRD) patterns, Raman spectra, scanning electron microscopy, energy dispersive X-ray analysis (EDX) and atomic forcemicroscopy. XRD studies of Cu-doped FeS thin films at all the temperatures revealed formation of single-phase FeS structure. With increasing substrate temperature from 250 to 450 degrees C, there was change in morphology from wafer-like to cylindrical plate-like. EDX analysis showed that the doping percentage of copper increased as the substrate temperature increased from 250 to 450 degrees C. Raman data supports the doping of copper in FeS films.

• 出版日期2010-10