A 0.13-mu m SiGe BiCMOS Colpitts-Based VCO for W-Band Radar Transmitters

作者：Sapone Giuseppina^*; Ragonese Egidio; Italia Alessandro; Palmisano Giuseppe

来源：IEEE Transactions on Microwave Theory and Techniques, 2013, 61(1): 185-194.

DOI：10.1109/TMTT.2012.2226053

• BiCMOS integrated circuits
• interleaved transformer
• millimeter-wave circuits
• voltage-controlled oscillator
• W-band

This paper presents a Colpitts-based voltage-controlled oscillator (VCO) for W-band radar applications. In the proposed circuit, the oscillation signal is directly drawn from the switching transistor bases by means of the primary winding of a transformer tank, while the secondary winding drives the output buffer. This solution improves both tuning range and oscillation swing with respect to traditional millimeter-wave VCO topologies without increasing power supply. The oscillator is implemented in a 0.13-mu m SiGe BiCMOS technology, along with high-frequency dividers to enable low-frequency testing. The VCO exhibits a phase noise of -99.3 dBc/Hz at 1-MHz offset from an oscillation frequency of 76 GHz and a tuning range of 4.9% with a consumption of 65 mW at 2.5-V power supply. The VCO is also used to drive a two-stage power amplifier in a fully integrated W-band transmitter that is able to deliver an overall output power as high as 15 dBm at 76 GHz.

• 出版日期2013-1