Avalanche Breakdown Design Parameters in GaN

作者：Li Zhongda^*; Pala Vipindas; Chow T Paul

来源：Japanese Journal of Applied Physics, 2013, 52(8): UNSP 08JN05.

DOI：10.7567/JJAP.52.08JN05

We have studied the avalanche breakdown design parameters of GaN n+/p and p+/n junctions in the voltage range of 1.2 to 12 kV using numerical simulations and analytical calculations. Important analytical models regarding the relationships between breakdown voltages, depletion width, maximum junction electric field and doping concentrations have been extracted which shows very high consistency with the results from numerical simulations. These analytical models can be used as guidelines in the designing of GaN high voltage power devices. The multiplication factors M-n and M-p have also been obtained and the analytical models have been extracted. The results showed that in GaN, n+/p junction is better than p+/n for the main voltage blocking junction due to a sharper avalanche current increase.

• 出版日期2013-8