A single electron transistor on an atomic force microscope probe

作者：Brenning HTA^*; Kubatkin SE; Erts D; Kafanov SG; Bauch T; Delsing P

来源：Nano Letters, 2006, 6(5): 937-941.

DOI：10.1021/nl052526t

We report fabrication as well as proof-of-concept experiments of a noninvasive sensor of weak nanoscale electric fields. The sensor is a single electron transistor ( SET) placed at the tip of a noncontact atomic force microscope (AFM). This is a general technology to make any nanometer-sized lithography pattern at edges or tips of a cantilever. The height control of the AFM allows the SET to hover a few nanometers above the substrate, improving both the electric field sensitivity and lateral resolution of the electrometer. Our AFM-SET sensor is prepared by a scalable technology. It means that the probe can be routinely fabricated and replaced, if broken.

• 出版日期2006-5