Direct Evidence of Mg Incorporation Pathway in Vapor-Liquid-Solid Grown p-type Nonpolar GaN Nanowires

作者：Patsha Avinash^*; Amirthapandian S; Pandian Ramanathaswarny; Bera Santanu; Bhattacharya Anirban; Dhara Sandip

来源：Journal of Physical Chemistry C, 2014, 118(41): 24165-24172.

DOI：10.1021/jp507216d

Doping of IIInitride based compound semiconductor nanowires is still a challenging issue to have control over the dopant distribution in precise locations of the nanowire optoelectronic devices. Knowledge of the dopant incorporation and its pathways in nanowires for such devices is limited by the growth methods. We report the direct evidence of incorporation pathway for Mg dopants in p-type nonpolar GaN nanowires grown via vaporliquidsolid (VLS) method in a chemical vapor deposition technique for the first time. Mg incorporation is confirmed using X-ray photoelectron (XPS) and electron energy loss spectroscopic (EELS) measurements. Energy filtered transmission electron microscopic (EFTEM) studies are used for finding the Mg incorporation pathway in the GaN nanowire. Photoluminescence studies on Mg doped GaN nanowires along with the electrical characterization on heterojunction formed between nanowires and n-Si confirm the activation of Mg atoms as p-type dopants in nonpolar GaN nanowires.

• 出版日期2014-10-16