科研之友
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摘要
Simple p-C/n-Si junctions have been fabricated by magnetron sputtering at room temperature and their current-voltage (I-V) characteristics have been investigated. The p-n junctions show good rectifying properties in a large voltage scope and interesting I-V characteristics. The most interesting phenomenon observed in these p-n junctions is that the temperature dependence of some junction resistance shows a metal-insulator transition whose transition temperature is hugely modulated from 162 to 236 K by a bias voltage increasing from 20 to 40 V. This work shows that amorphous carbon films combined with other semiconductor materials can result in some interesting properties that may have potential applications.
- 出版日期2007-3-1
- 单位中国石油大学（北京）
