Size effects in ultrathin epitaxial ferroelectric heterostructures

作者:Nagarajan V*; Prasertchoung S; Zhao T; Zheng H; Ouyang J; Ramesh R; Tian W; Pan XQ; Kim DM; Eom CB; Kohlstedt H; Waser R
来源:Applied Physics Letters, 2004, 84(25): 5225-5227.
DOI:10.1063/1.1765742

摘要

In this letter we report on the effect of thickness scaling in model PbZr(0.2)Ti(0.8)O(3)(PZT)/SrRuO(3) heterostructures. Although theoretical models for thickness scaling have been widely reported, direct quantitative experimental data for ultrathin perovskite (<10 nm) films in the presence of real electrodes have still not been reported. In this letter we show a systematic quantitative experimental study of the thickness dependence of switched polarization in (001) epitaxial PZT films, 4 to 80 nm thick. A preliminary model based on a modified Landau Ginzburg approach suggests that the nature of the electrostatics at the ferroelectric-electrode interface plays a significant role in the scaling of ferroelectric thin films.

  • 出版日期2004-6-21