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摘要
A methodology for the quantitative electrical characterization of defects at metal/high-k interfaces is proposed. It includes modelling of trapping in the oxide, fit of experiments, and calculation of the system band diagram after trapping. As a result, the defect concentrations and energy levels are extracted. The methodology is demonstrated on metal-oxide-semiconductor systems, but its results can be extended on whatever structure containing an interface between a metal and a high-k dielectric film.
- 出版日期2014-5
