A 36-80 GHz High Gain Millimeter-Wave Double-Balanced Active Frequency Doubler in SiGe BiCMOS

作者：Chen Austin Ying Kuang^*; Baeyens Yves; Chen Young Kai; Lin Jenshan

来源：IEEE Microwave and Wireless Components Letters, 2009, 19(9): 572-574.

DOI：10.1109/LMWC.2009.2027084

• BiCMOS
• frequency doubler
• millimeter-wave (mm-wave)
• signal generation
• silicon-germanium (SiGe)

This letter presents a high conversion gain double-balanced active frequency doubler operating from 36 to 80 GHz. The circuit was fabricated in a 200 GHz and f(T) and f(max) 0.18 mu m SiGe BiCMOS process. The frequency doubler achieves a peak conversion gain of 10.2 dB at 66 GHz. The maximum output power is 1.7 dBm at 66 GHz and -3.9 dBm at 80 GHz. The maximum fundamental suppression of 36 dB is observed at 60 GHz and is better than 20 dB from 36 to 80 GHz. The frequency doubler draws 41.6 mA from a nominal 3.3 V supply. The chip area of the active frequency doubler is 640 mu m x 424 mu m (0.272 mm(2)) including the pads. To the best of authors' knowledge, this active frequency doubler has demonstrated the highest operating frequency with highest conversion gain and output power among all other silicon-based active frequency doublers reported to date.

• 出版日期2009-9