AN ACCURATE ANALYTICAL MODEL FOR NONEQUILIBRIUM DRIFT-VELOCITY AND CHORD-MOBILITY OF In0.53Ga0.47As

作者：Moreno E^*; Varani L

来源：Lithuanian Journal of Physics, 2018, 58(2): 170-176.

DOI：10.3952/physics.v58i2.3746

• InGaAs
• mobility model
• charge carrier mobility
• drift-diffusion
• semiconductor
• Monte Carlo methods
• transport
• carrier velocity

Mobility models are an essential tool for an accurate description of the charge carrier dynamics in semiconductor materials and devices. By means of a simulator based on the Monte Carlo method which has been properly validated, a set of velocity and chord-mobility data was generated for electrons and holes in In0.53Ga0.47As bulk material as a function of electric field and for different concentrations of donors and acceptors. This set has been used to build an accurate velocity and chord-mobility analytical model, the mathematical simplicity of which represents a significant advantage because it provides necessary values by a rapid calculation process without forgoing accuracy. The model can be easily implemented in compact numerical simulations of electronic devices and associated circuits where a fast recovery of the velocity and mobility values corresponding to the local electric field and doping concentration is needed.

• 出版日期2018