摘要

A new growth method has been proposed and verified to be effective for improving the crystalline quality of GaN epilayers grown by radio-frequency plasma-assisted molecular beam epitaxy (RF-MBE) at low temperature. In this new method, an indium (In) layer is predeposited before the main growth of low-temperature (LT) GaN. The improved quality for LT GaN probably comes from a selective growth process between In and gallium (Ga) in predeposited In coverage, which is similar to the process of several-monolayer-level liquid-phase epitaxy. This method may enable the extension of the application field of nitride semiconductors, for example, to solar cells.

  • 出版日期2012-12