科研之友
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摘要
To clarify the growth mechanism of the lateral growth of Ge in the rapid-melting-growth process, two types of molecular-dynamics simulation were investigated in this study. One was the nucleation of Si1-xGex (0 %26lt;= x %26lt;= 1) from supercooled melts, and the other is the growth rate of supercooled Si1-xGex melts using a crystalline Si1-xGex seed. The incubation time is found to be minimum at approximately 0.70 T-m (T-m: melting temperature for Si1-xGex). No nucleation was found when the temperature was higher than 0.75 T-m. The crystal growth rates of Si1-xGex peaked between 0.90 T-m and 0.94 T-m for both the [100] and [111] orientations. These results suggest that 0.90 T-m to 0.94 T-m of Si1-xGex (x = 1) is an optimum temperature range to grow crystalline Ge in the rapid-melting-growth process.
- 出版日期2012-3
