科研之友
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摘要
A finite-element programme has been developed to model strain relaxation ill the case of epitaxial Si1-xGex/Si coherent quantum dots either with or without compositional inhomogeneities. The resulting elastic displacement Fields Lire used to calculate the intensity of dynamical plan view TEM images of such quantum dots. Various types of linear or parabolic compositional inhomogeneities are studied. TEM images of quantum dots with Such inhomogeneities are calculated as well as those of quantum dots with a homogeneous composition. They are then compared with experimental images. It is shown how the analysis of the main features of these experimental images (black/white lobes and moire-like fringes) enables us to determine the conditions in which it is possible to distinguish quantum dots with a homogeneous composition from those with compositional inhomogeneity.
- 出版日期2007-4-1
