Microwave irradiation-assisted deposition of Ga2O3 on III-nitrides for deep-UV opto-electronics

作者：Jaiswal Piyush; Ul Muazzam Usman; Pratiyush Anamika Singh; Mohan Nagaboopathy; Raghavan Srinivasan; Muralidharan R; Shivashankar S A; Nath Digbijoy N

来源：Applied Physics Letters, 2018, 112(2): 021105.

DOI：10.1063/1.5010683

<jats:p>We report on the deposition of Ga2O3 on III-nitride epi-layers using the microwave irradiation technique. We also report on the demonstration of a Ga2O3 device: a visible-blind, deep-UV detector, with a GaN-based heterostructure as the substrate. The film deposited in the solution medium, at &amp;lt;200 °C, using a metalorganic precursor, was nanocrystalline. XRD confirms that the as-deposited film, when annealed at high temperature, turns to polycrystalline β−Ga2O3. SEM shows the as-deposited film to be uniform, with a surface roughness of 4–5 nm, as revealed by AFM. Interdigitated metal-semiconductor-metal devices with Ni/Au contact exhibited a peak spectral response at 230 nm and a good visible rejection ratio. This demonstration of a deep-UV detector on the β−Ga2O3/III-nitride stack is expected to open up possibilities of functional and physical integration of β−Ga2O3 and GaN material families towards enabling next-generation high-performance devices by exciting band and heterostructure engineering.</jats:p>

• 出版日期2018-1-8