A novel 0.84 ppm/degrees C CMOS curvature-compensated bandgap with 1.2 V supply voltage

作者：Xu, Huachao; Zhang, Yuanzhi; Yan, Xiaobing; Wang, Jin; Lu, Chao^*; Li, Guofeng^*

来源：AEU-International Journal of Electronics and Communications, 2018, 91: 66-74.

DOI：10.1016/j.aeue.2018.05.001

• Low supply voltage
• Curvature-compensated bandgap
• Temperature coefficient
• Line regulation

This paper proposes a novel CMOS curvature-compensated bandgap reference (BGR) by using a new full compensation technique. The theory behind the proposed full compensation technique is analyzed. The proposed BGR is designed and implemented using 0.15 mu m standard CMOS process. Simulation results show that the proposed BGR achieves a temperature coefficient (TC) of 0.84 ppm/degrees C over the temperature range from -40 degrees C to 120 degrees C with a 1.2 V supply voltage. The current consumption of proposed BGR is 51 mu A at 27 degrees C. The line regulation of proposed BGR is 0.023%/V over the supply voltage range from 1.2 V to 1.8 V at 27 degrees C. In addition, the PSRRs of proposed BGR are -91 dB, -81 dB, -61 dB and -29 dB at DC or 10 Hz, 1 kHz, 10 kHz, and 100 kHz, respectively.

• 出版日期2018
• 单位河北大学; 南开大学