摘要
A 0.32-THz 7x7 SiGe HBT incoherent detector array with both horizontal and vertical polarization capability is implemented in 0.13-mu m SiGe BiCMOS technology. The average responsivity of the detector is 2.7 and 2.49 kV/W from 316 to 324 GHz for the horizontal and vertical polarizations, respectively, with a corresponding noise equivalent power of 23.8 and 25.8 pW/root Hz at an IF of 78.125 kHz. The contrast of metallic objects with features below the diffraction limit is enhanced by utilizing this chip's polarization diversities.