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摘要
An accurate and compact large-signal model is proposed for modeling heterojunction bipolar transistors (HBT) fabricated on InP material. In DC mode, the model includes self-heating and soft-knee effects, as well as the temperature dependence of the model parameters. In small-signal mode, the model captures the variation of various AC parameters with bias. The procedure of extracting the model parameters uses DC and multiple bias S-parameter measurements. The validity and the accuracy of the large-signal model are assessed by comparing the simulation with measured DC characteristics, small-signal behavior and large signal operation of an InP HBT.
- 出版日期2018-7
- 单位中国人民解放军海军工程大学
