Structural, optical, and electrical properties of Mo-doped ZnO thin films prepared by magnetron sputtering

作者:Wu, Muying*; Yu, Shihui; Chen, Guihua; He, Lin; Yang, Lei; Zhang, Weifeng
来源:Applied Surface Science, 2015, 324: 791-796.
DOI:10.1016/j.apsusc.2014.11.039

摘要

Molybdenum doped zinc oxide thin films have been prepared by RF magnetron sputtering. The influence of the film thickness (120-500 nm) on the structural, electrical, and optical properties of the films is investigated respectively. X-ray diffraction (XRD) studies reveal that with an increase in the film thickness, the crystallinity of the film improves. The obtained film with thickness of 500 nm exhibits the best electrical properties with the lowest resistivity of around 9.6 x 10(-4) Omega cm. The mobility varied from 7.8 to 14.7 cm(2) V-1 s(-1) without reducing the achieved high carrier concentration of similar to 4.5 x 10(20) cm(-3). Optical band gaps extracted from transmission spectra shows irregular changes due to the Burstein-Moss shift modulated by many-body effects.