Direct current electric field adjustable phase transformation behavior in (Pb,La)(Zr,Ti)O-3 antiferroelectric thick films

作者：Chou, Xiujian^*; Geng, Wenping; Lv, Yongbo; Liu, Jun; Zhang, Wendong

来源：Journal of Materials Science: Materials in Electronics , 2013, 24(3): 861-865.

DOI：10.1007/s10854-012-0835-1

• SOL-GEL PROCESS

(Pb,La)(Zr,Ti)O-3 antiferroelectric 1.4 mu m-thick films have been prepared on Pt (111)/Ti/SiO2/Si(100) substrates by sol-gel process. The structures and dielectric properties of the antiferroelectric thick films were investigated. The films displayed pure perovskite structure with (100)-preferred orientation. The surface of the films was smooth, compact and uniform. The antiferroelectric (AFE) characterization have been demonstrated by P (polarization)-E (electric field) and C(capacitance)-V (DC bias) curves. The AFE-ferroelectric (FE) and FE-to-paraelectric (PE) phase transition were also investigated as coupling functions of temperature and direct current electric field. With the applied field increased, the temperature of AFE-to-FE phase transition decreased and the FE-to-PE phase shifted to high temperature. The AFE-to-FE phase transition was adjustable by direct current electric field. (Pb,La) (Zr,Ti) O-3 antiferroelectric films have broad application prospects in microelectromechanical systems because of the phase transition.

• 出版日期2013-3
• 单位中北大学