科研之友
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摘要
Nanoscale vertical interconnect structures (vias) made from chemical vapor deposited carbon have been investigated. The vias and wires were created by pyrolytic carbon deposition from acetylene at 950 degrees C followed by electron beam lithography and reactive ion etching. The carbon layer exhibits a resistivity of 4.5 m Omega cm in vias and wires which decreases to 1.5 m cm after annealing at 1000 degrees C. The resistivity does not show any size effect in the vias, as it is independent of the diameter from 85 nm down to 24 nm. The maximum current density in long carbon wires was found to be 6x10(6) A cm(-2), increasing to 3.5x10(8) A cm(-2) for short vias.
- 出版日期2010-6-1
