科研之友
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摘要
We have studied the formation and modification of germanium nanoclusters in GeOx films under the action of pulse laser and isochronous furnace annealing. Pulse treatments were effected using either a Ti-sapphire laser operating at a wavelength of lambda = 800 nm and a pulse duration tau of about 30 fs or a KrF excimer laser with lambda = 248 nm and tau = 25 ns. The pulse annealing stimulated both the crystallization of initial amorphous Ge nanoclusters in GeOx matrix and the formation of new nanoclusters. In order to prevent the evaporation of films under the action of laser radiation, the samples were covered with a protective layer of SiNxOy. The proposed approach can be used for the modification of dimensions and phase composition of Ge clusters in GeOx films.
- 出版日期2010-5
