摘要

Electron transport and thermomagnetic properties of wires of both pure bismuth and bismuth doped with Sn and Te are studied in a wide range of diameters, temperatures, and magnetic fields. As shown, the quantum size effect leads to both the semiconductor dependence R(T) with decreasing diameter of Bi or its alloys' wires and the thermopower sign reversal. As revealed, the application of doping, magnetic fields, and elastic strain to quantum Bi wires gives the possibility to control not only the value of thermopower but also its sign and thus to significantly affect the thermoelectric efficiency of the material. As also revealed, the shift of the size maximum in the longitudinal magnetoresistance and magnetothermopower with temperature represents the behaviour of the temperature dependence of carrier mobility, and its dependence on tensile strain at 4.2 K characterizes the change in the cross section of the Fermi surface of L-carriers.