Direct observation of structural and defect evolution in C-rich SiC using in situ helium ion microscopy

作者：Liu, Wen; Cheng, Laifei; Li, Xiaoqiang; Wang, Yiguang^*

来源：Nanoscale, 2016, 8(2): 762-765.

DOI：10.1039/c5nr06659j

• SILICON-CARBIDE
• IRRADIATION
• FUSION
• CARBON

The microstructural effects of SiC swelling, mechanisms of He diffusion and aggregation in C-rich SiC are studied using an in situ helium ion microscope. The additive carbon interface provides improved swelling resistance in SiC to similar to 270 nm, and defect formation is not observed until very high He implantation doses.

• 出版日期2016
• 单位西北工业大学