科研之友
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摘要
In this letter, we demonstrate that few-layer orthorhombic arsenene is an ideal semiconductor. Owing to the layer stacking, multilayer arsenenes always behave as intrinsic direct bandgap semiconductors with gap values of approximately 1 eV. In addition, these bandgaps can be further tuned in its nanoribbons. Based on the so-called acoustic phonon limited approach, the carrier mobilities are predicted to approach as high as several thousand square centimeters per volt-second and to simultaneously exhibit high directional anisotropy. All these characteristics make few-layer arsenene promising for device applications in the semiconducting industry.
- 出版日期2015-5
- 单位兰州大学
