Divacancy-iron complexes in silicon

作者：Tang C K^*; Vines L; Markevich V P; Svensson B G; Monakhov E V

来源：Journal of Applied Physics, 2013, 113(4): 044503.

DOI：10.1063/1.4788695

Iron and irradiation-induced defects have been investigated in p-type float-zone silicon after MeV electron-irradiation using deep level transient spectroscopy. Isochronal annealing (30 min) was performed up to 250 degrees C, and three distinctive energy levels are observed in the Fe-contaminated samples with positions of 0.25, 0.29, and 0.34 eV above the valence band edge, respectively. The two latter ones are found to accompany the change in concentration of the divacancy center (V-2) during the isochronal annealing which strongly indicates an interaction between Fe and V-2. Furthermore, the properties of the defects support recent theoretical predictions of FeV2 and VFeV (Estreicher et al., Phys. Rev. B 77, 125214 (2008)).

• 出版日期2013-1-28