AN X-BAND RLC MATCHED POWER AMPLIFIER USING QUASI-MMIC TECHNOLOGY

作者：An Sung Jin; Kim Dongsu; Yook Jong Min; Kim Sung Ryul; Lee Won Chul; Kim Jun Chul; Yook Jong Gwan

来源：Microwave and Optical Technology Letters, 2015, 57(12): 2803-2807.

DOI：10.1002/mop.29449

• GaN
• silicon integrated passive device
• quasi-MMIC
• RLC matched circuit
• X-band

This article presents an RLC matched power amplifier using quasi-MMIC technology in the X-band. The power amplifier consists of a GaN HEMT power device and several passive components including inductors, capacitors, resistors, and transmission lines using a silicon integrated passive device (IPD) process. The standard silicon process can drive the solution to cost down compared with conventional microwave monolithic integrated circuit (MMIC) technology. This technology using silicon IPDs provides small size matching networks close to MMIC dimensions. The input matching network using the RLC matched circuit is designed to obtain broadband characteristic and gain flatness. The dimensions of input and output silicon IPD are 1.5 mm x 1.2 mm and 1.9 mm x 2.2 mm, respectively, with a thickness of only 0.15 mm. The measured results show that the quasi-MMIC power amplifier has a P(3)dB of more than 38.3 dBm with a drain efficiency of more than 51.2% in the frequency range from 8.2 to 10 GHz.

• 出版日期2015-12