科研之友
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摘要
Hydrogenated amorphous silicon thin-film transistors (TFTs) with channel length below 4 pm, were successfully fabricated using a new halftone exposure technique combined with conventional photolithography. A concept of asymmetric double-slit design was applied to decrease channel length (L). TFTs having a channel length down to 3 mu m was successfully fabricated, and showed better output capability with minor changes in mobility and off-state current.
- 出版日期2009-3
