A broadband regenerative frequency divider in InGaP/GaAs HBT technology

作者：Zhang Jincan; Zhang Yuming; Lü Hongliang; Zhang Yimen; Liu Min; Zhong Yinghui; Shi Zheng

来源：Chinese Journal of Semiconductors, 2014, 35(7): 143-146.

DOI：10.1088/1674-4926/35/7/075004

• Active load
• broadband
• Heterojunction bipolar transistor (HBTs)
• InGaP/GaAs HBT
• On-wafer measurements
• Operation bandwidth
• Operation frequency
• Regenerative frequency divider

A dynamic divide-by-two regenerative frequency divider(RFD) is presented in a 60-GHz-fT InGaP/GaAs heterojunction bipolar transistors(HBTs) technology. To achieve high operation bandwidth, active loads instead of resistor loads are incorporated into the RFD. On-wafer measurement shows that the divider is operating from 10 GHz up to at least 40 GHz, limited by the available input frequency. The maximum operation frequency of the divider is found to be much higher than fT/2 of the transistor, and also the divider has excellent input sensitivity.The divider consumes 300.85 mW from 5 V supply and occupies an area of 0.47×0.22 mm2.

• 出版日期2014-7
• 单位西安电子科技大学