Analysis of the Dislocation and Polarity in an AlN Layer Grown Using Ga-Al Flux

作者：Adachi Masayoshi; Takasugi Mari; Morikawa Daisuke; Tsuda Kenji; Tanaka Akikazu; Fukuyama Hiroyuki^*

来源：Applied Physics Express, 2012, 5(10): 101001.

DOI：10.1143/APEX.5.101001

We have developed a novel liquid-phase epitaxial (LPE) technique that uses Ga-Al flux to grow AlN layers on nitrided sapphire substrates. In this study, cross-sectional and plan-view images were taken using a transmission electron microscope. An edge dislocation was dominant in the LPE AlN layers; its density was approximately 5 x 10(9) cm(-2). Convergent-beam electron diffraction analysis revealed that the LPE layer had Al polarity, even though the nitrided sapphire layer had N polarity. The oxygen potential in the injecting N-2 gas played an important role in the polarity inversion in the LPE growth.

• 出版日期2012-10